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Advanced Power MOSFET
IRFU410A
IRFU410A
BVDSS = 520 V RDS(on) = 10.0 ID = 1.2 A
TO-220
Improved Inductive Ruggedness Rugged Polysilicon Gate Cell Structure Fast Switching Times Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Improved High Temperature Reliability
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Value 520 1.2 0.8
1 O
Units V A A V mJ A mJ V/ns W W/ C
4.0 + 20 _ 40 1.2 4.2 3.5 42 0.33 -55 to +150
O 1 O 1 O 3 O
2
C
300
Thermal Resistance
Symbol RJC R CS R JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -1.7 -Max. 3.0 -110
Units
C /W
Rev. B
(c)1999 Fairchild Semiconductor Corporation
IRFU410A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 520 -2.0 -----------------0.60 ------0.70 -4.5 9.5 --4.0 100 -100 10 1000 10 -300 80 40 20 30 60 45 21 --nC VDS=416V,VGS=10V,ID=1.2A See Fig 6 & Fig 12
45 OO
Test Condition VGS=0V,ID=250 A ID=250 A VGS=30V VGS=-30V VDS=520V VDS=416V,TC=125 C VGS=10V,ID=0.6A VDSA50V,ID=0.6A
4 O 4 O
V V/ C V nA A pF
See Fig 7
VDS=4V,ID=250 A
VGS=0V,VDS=25V,f =1MHz See Fig 5
ns
VDD=260V,ID=1.2A,RG=9.1 See Fig 13
45 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O 4 O
Min. Typ. Max. Units --------350 506 1.2 4.0 1.15 -A V ns C
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=1.2A,VGS= 0V TJ=25 C,IF=1.2A diF/dt=100A/ s
4 O

Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=40mH, V =25V, R =25 , Starting T =25 C 3 O dv/dt Test Condition 4 _ O Pulse Test : Pulse Width = 250 s, Duty Cycle < 2% 5 O Essentially Independent of Operating Temperature
dd
G
J
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
1 0 TOP : 3 VGS 10V 9V 8V 7V 6V 5V
80us Pulse Test Vds>Id(on)Rds(on)
IRFU410A
Fig 2. Transfer Characteristics
1 BOTTOM
ID, DRAIN CURRENT (AMPERES)
Id, DRAIN CURRENT (AMPERES)
2
Tj=150 oC
0.1
@Note : 1. 250us Pulse Test 2. Tc=25 oC
1
Tj=25 oC Tj=-25 oC
0
0.01 0.1
1
1 0
100
0
2
4
6
8
1 0
1 2
VDS,DRAIN-TO-SOURCE VOLTAGE(VOLTS) Typical Output Characteristics
Vgs,GATE-TO-SOURCE VOLTAGE(VOLTS) Typical Transfer Characteristics
Rds(on), DRAIN -TO-SOURCE ON RESISTANCE(OHMS)
Fig 3. On-Resistance vs. Drain Current
20 10 0
Fig 4. Source-Drain Diode Forward Voltage
IDR,REVERSE DRAIN CURRENT (AMPERES)
1 6
VGS=10V
Tj=25oC
Tj=1 0C 5o 1 0
1 2
VGS=20V
8 @ Note : Tj=25C o 4 0.0
@Note : 1. Vgs=0V 2. 250us Pulse Test 1 0 1 2 3 4 5 6
0.5
1.0
1.5
2.0
2.5
3.0
ID,DRAIN CURRENT(AMPERES) Typical On-Resistance Vs. Drain Current
VSD,SOURCE-TO-DRAIN VOLTAGE(VOLTS) Typical Source-Drain Diode Forward Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
250
Fig 6. Gate Charge vs. Gate-Source Voltage
1 6
Vgs, GATE-TO-SOURCE VOLTAGE(VOLTS)
Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd
200
1 4 1 2 1 0 8 6 4 2 ID=1.2A 0 0 2 4 6 8 1 0 1 2 1 4
Capacitance (pF)
150
Ciss
100
50
Coss Crss
@Notes : 1. Vgs=0V 2. f=1MHz
VDS=400V
0 1 1 0 100
VDS, Drain -Source Voltage (v)
Qg,TOTAL GATE CHARGE(nC) Typical Gate Charge Vs. Gate-To-Source Voltage
IRFU410A
Fig 7. Breakdown Voltage vs. Temperature
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) BVDSS,DRAIN-TO-SORUCE BREAKDOWN VOLTAGE (NORMALIZED)
1.2 2.8
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
2.4
1 . 1
2.0
1.0
1.6
1.2
VGS=10V ID=0.6A
0.9
0.8
0.4 -50 0 50 100 150
0.8 -75
-50
-25
0
25
50
75
100
125
150
175
Tj,JUNCTION TEMPERATURE(oC) Breakdown Voltage Vs. Temperature
Tj=JUNCTION TEMPERATURE(o)C Breakdown Voltage Vs. Temperature
Fig 10. Max. Drain Current vs. Case Temperature
2.0
ID, DRAIN CURRENT (AMPERES)
1.5
1.0
0.5
0.0 25.0
37.5
50.0
62.5
75.0
87.5
100.0
112.5
125.0
137.5
150.0
Ta, AMBIENT TEMPERATURE(oC) Maximum Drain Current Vs. Case Temperature
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRFU410A
" Current Regulator "
50K 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (IG) Resistor
R2
Current Sampling (ID) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT 10V Vin
10%
Vout VDD
( 0.5 rated VDS )
90%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
IRFU410A
N-CHANNEL POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
* dv/dt controlled by "RG" * IS controlled by Duty Factor "D"
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
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First Production
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Full Production
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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